AMB substrates are usually copper-ceramic composites which, unlike the DCB substrate, are manufactured with an active solder (TiCu/TiAg) between copper and ceramic.
The technological advantages over the standard DCB substrate are very high.
A temperature cyclability (TC), depending on the material and test conditions, is usually -55°C/+150°C, with > 8,000 cycles, without the copper delamination from the ceramic possible.
An additional and very important property is the partial discharge capability, especially for applications above 1.7kV, since in the AMB process is, unlike the DCB process, no voids between copper and ceramic existing.
For AMB substrates, mainly AlN (up to 250 W/mK) and Si3N4 (85 – 130 W/mK) ceramic substrates are used as insulators.
Due to the special manufacturing method, copper thicknesses (standard 0.3 – 0.8 mm) even up to 2mm on layout side and bottom side are possible.
We offer a wide range of different ceramic substrates as AMB – composite material:
- AlN – aluminum nitride ceramic with very high thermal conductivity up to 250 W/mK.
- Si3N4 – silicon nitride ceramic with high mechanical strength up to 700 Mpa
- Delivery as single parts or in master cards (multiple-up array)
- Customized thicknesses and surface coatings available on request
Material Mix
| AlN-AMB Substrate | Cu [mm] | 0,3 | 0,4 | 0,5 | 0,6 | 0,8 | 1,0 |
| Ceramic [mm] | 0,381 | x | x | x | x | ||
| 0,635 | x | x | x | x | x | x | |
| 1,0 | x | x | x | x | x | x |
| Si3N4-AMB Substrate | Cu [mm] | 0,3 | 0,4 | 0,5 | 0,6 | 0,8 | 1,0 | 2,0 |
| Ceramic [mm] | 0,2 | R&D | R&D | |||||
| 0,25 | x | x | R&D | R&D | ||||
| 0,32 | x | x | x | x | x | x | X | |
| 0,635 | x | x | x | x | x | x | X |