Cu-AlN & Al-AlN Substrates
| Cu-AlN AMB | Advantages of DOWA’s substrates: | Super - CMC |
| High ceramic bending strength | ||
| X | 500 MPa @ 0.635 mm AlN | |
| 650 MPa @ 0.635 mm AlN | X | |
| X | High thermal conductivity | X |
| AlN ceramic (Typ. 170 – 190 W/mK @ 20 °C) | ||
| Very high partial discharge properties | ||
| Typ. PD ≤ 10 pC @ 9kVrms; 0.635 mm AlN | X | |
| Low substrate bow | ||
| X | Metallization during batch process | |
| Excellent bonding area | ||
| X | Cu-ceramic > 95% | |
| Al-ceramic > 97% | X | |
| High heat cycle toughness | ||
| X | > 1.000 cycles @ -40/+125 °C | |
| > 3.000 cycles @ -40/+125 °C | X | |
| Very good wire bonding | ||
| Al-Al-wire bonding | X | |
| Reduced weight | ||
| Lighter than DCB- or AMB substrates | X |
