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Cu-AlN AMB |
Advantages of DOWA’s substrates: |
Super - CMC |
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High ceramic bending strength |
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X |
500 MPa @ 0.635 mm AlN |
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650 MPa @ 0.635 mm AlN |
X |
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X |
High thermal conductivity |
X |
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AlN ceramic (Typ. 170 – 190 W/mK @ 20 °C) |
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Very high partial discharge properties |
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Typ. PD ≤ 10 pC @ 9kVrms; 0.635 mm AlN |
X |
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Low substrate bow |
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X |
Metallization during batch process |
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Excellent bonding area |
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X |
Cu-ceramic > 95% |
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Al-ceramic > 97% |
X |
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High heat cycle toughness |
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X |
> 1.000 cycles @ -40/+125 °C |
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> 3.000 cycles @ -40/+125 °C |
X |
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Very good wire bonding |
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Al-Al-wire bonding |
X |
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Reduced weight |
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Lighter than DCB- or AMB substrates |
X |
